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Singlet-triplet-state readout in silicon-metal-oxide-semiconductor double quantum dots

Authors :
Ma, Rong-Long
Zhu, Sheng-Kai
Kong, Zhen-Zhen
Sun, Tai-Ping
Ni, Ming
Zhou, Yu-Chen
Zhou, Yuan
Luo, Gang
Cao, Gang
Wang, Gui-Lei
Li, Hai-Ou
Guo, Guo-Ping
Source :
Phys. Rev. Applied 21, 034022 (2024)
Publication Year :
2023

Abstract

High-fidelity singlet-triplet state readout is essential for large-scale quantum computing. However, the widely used threshold method of comparing a mean value with the fixed threshold will limit the judgment accuracy, especially for the relaxed triplet state, under the restriction of relaxation time and signal-to-noise ratio. Here, we achieve an enhanced latching readout based on Pauli spin blockade in a Si-MOS double quantum dot device and demonstrate an average singlet-triplet state readout fidelity of 97.59% by the threshold method. We reveal the inherent deficiency of the threshold method for the relaxed triplet state classification and introduce machine learning as a relaxation-independent readout method to reduce the misjudgment. The readout fidelity for classifying the simulated single-shot traces can be improved to 99.67% by machine learning method, better than the threshold method of 97.54% which is consistent with the experimental result. This work indicates that machine learning method can be a strong potential candidate for alleviating the restrictions of stably achieving high-fidelity and high-accuracy singlet-triplet state readout in large-scale quantum computing.<br />Comment: 11 pages,11 figures

Details

Database :
arXiv
Journal :
Phys. Rev. Applied 21, 034022 (2024)
Publication Type :
Report
Accession number :
edsarx.2309.09723
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevApplied.21.034022