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Inkjet-Printed High-Yield, Reconfigurable, and Recyclable Memristors on Paper

Authors :
Chen, Jinrui
Xiao, Mingfei
Chen, Zesheng
Khan, Sibghah
Ghosh, Saptarsi
Macadam, Nasiruddin
Chen, Zhuo
Zhou, Binghan
Yun, Guolin
Wilk, Kasia
Tian, Feng
Fairclough, Simon
Xu, Yang
Oliver, Rachel
Hasan, Tawfique
Publication Year :
2023

Abstract

Reconfigurable memristors featuring neural and synaptic functions hold great potential for neuromorphic circuits by simplifying system architecture, cutting power consumption, and boosting computational efficiency. Their additive manufacturing on sustainable substrates offers unique advantages for future electronics, including low environmental impact. Here, exploiting structure-property relationship of MoS2 nanoflake-based resistive layer, we present paper-based, inkjet-printed, reconfigurable memristors. With >90% yield from a 16x65 device array, our memristors demonstrate robust resistive switching, with $>10^5$ ON-OFF ratio and <0.5 V operation in non-volatile state. Through modulation of compliance current, the devices transition into volatile state, with only 50 pW switching power consumption, rivalling state-of-the-art metal oxide-based counterparts. We show device recyclability and stable, reconfigurable operation following disassembly, material collection and re-fabrication. We further demonstrate synaptic plasticity and neuronal leaky integrate-and-fire functionality, with disposable applications in smart packaging and simulated medical image diagnostics. Our work shows a sustainable pathway towards printable, high-yield, reconfigurable neuromorphic devices, with minimal environmental footprint.<br />Comment: 17 pages, 5 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2312.16501
Document Type :
Working Paper