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Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
- Source :
- Microelectronic Engineering 88 (2011) 2991-2996
- Publication Year :
- 2024
-
Abstract
- Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500 $^\circ$C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiO$_x$ is observed as temperature is increased, up to 1.6 nm for 750 $^\circ$C. This temperature yields the lowest interface trap density, 4e10 eV$^{-1}$ cm$^{-2}$, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity.<br />Comment: 22 pages, 7 figures, 1 table
- Subjects :
- Condensed Matter - Materials Science
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Microelectronic Engineering 88 (2011) 2991-2996
- Publication Type :
- Report
- Accession number :
- edsarx.2402.10925
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1016/j.mee.2011.04.058