Cooperatively Modulating Magnetic Anisotropy and Colossal Magnetoresistance via Atomic-Scale Buffer Layers in Highly Strained La0.7Sr0.3MnO3 Films

Simultaneous control of magnetic anisotropy and magnetoresistance, especially with atomic scale precision, remains a pivotal challenge for realizing advanced spintronic functionalities. Here we demonstrate cooperative continuous control over both magnetoresistance and magnetic anisotropy in highly strained La0.7Sr0.3MnO3 (LSMO) thin films. By inserting varying perovskite buffer layers, compressively strained LSMO films transition from a ferromagnetic insulator with out-of-plane magnetic anisotropy to a metallic state with in-plane anisotropy. Atomic-scale buffer layer insertion enables remarkably acute, precise control to sharply modulate this magnetic phase transformation. A gigantic 10,000% modulation of the colossal magnetoresistance (CMR) and an exceptionally sharp transition from out-of-plane to in-plane magnetic anisotropy are attained in just a few contiguous layers. These atomic-scale correlations among electronic, magnetic, and structural order parameters yield flexible multifunctional control promising for next-generation oxide spintronics.
Comment: 18 pages, 4 figures