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CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator
- Publication Year :
- 2024
-
Abstract
- Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in AlScN-based modulators, demonstrating $V_{\pi}L$ around 750 V$\cdot$cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.<br />Comment: 9 pages, 3 figures
- Subjects :
- Physics - Optics
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2405.11102
- Document Type :
- Working Paper