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Hofstadter spectrum in a semiconductor moir\'e lattice

Authors :
Zhao, Chen
Wu, Ming
Ma, Zhen
Liang, Miao
Lu, Ming
Gao, Jin-Hua
Xie, X. C.
Publication Year :
2024

Abstract

Recently, the Hofstadter spectrum of a twisted $\mathrm{WSe_2/MoSe_2}$ heterobilayer has been observed in experiment [C. R. Kometter, et al. Nat.Phys.19, 1861 (2023)], but the origin of Hofstadter states remains unclear. Here, we present a comprehensive theoretical interpretation of the observed Hofstadter states by calculating its accurate Hofstadter spectrum. We point out that the valley Zeeman effect, a unique feature of the transition metal dichalcogenide (TMD) materials, plays a crucial role in determining the shape of the Hofstadter spectrum, due to the narrow bandwidth of the moir\'e bands. This is distinct from the graphene-based moir\'e systems. We further predict that the Hofstadter spectrum of the moir\'e flat band, which was not observed in experiment, can be observed in the same system with a larger twist angle $2^\circ\lesssim\theta \lesssim 3^\circ$. Our theory paves the way for further studies of the interplay between the Hofstadter states and correlated insulting states in such moir\'e lattice systems.<br />Comment: 7 pages, 4 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2406.08044
Document Type :
Working Paper