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Second-order topological insulator in Bilayer borophene

Authors :
Wang, Licheng
Qureshi, Ali Hamza
Sun, Yi
Xu, Xiaokang
Yao, Xiaojing
Zhao, Xinli
He, Ai-Lei
Zhou, Yuan
Zhang, Xiuyun
Publication Year :
2024

Abstract

As the novel topological states, the higher-order topological insulators have attracted great attentions in the past years. However, their realizations in realistic materials, in particular in two dimensional systems, remains the big challenge due to the lack of adequate candidates. Here, based on the first-principle calculation and tight-binding model simulations, we identify the currently \emph{existing} bilayer $\alpha_{5}$-phase borophenes as the two-dimensional second-order topological insulators, protected by the $C_{2}$-rotational symmetry. The formation of interlayer B-B covalent bonds, stabilizing the bilayer borophenes and opening the large direct bulk gaps ($\sim 0.55-0.62$ eV) at Fermi level, plays the key roles. The second-order topology is characterized by the bulk quantized quadrupole momentum. Our results enriches the candidates for the second-order topological insulators, and also provide a way to study topological states in borophenes.<br />Comment: 9 Pages, 7 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2407.10432
Document Type :
Working Paper