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Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films
- Publication Year :
- 2024
-
Abstract
- Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties such as a single-crystal-like bandgap and a low density of F+ centers.
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2407.17194
- Document Type :
- Working Paper