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Monolayer optical memory cells based on artificial trap-mediated charge storage and release

Authors :
Juwon Lee
Sangyeon Pak
Young-Woo Lee
Yuljae Cho
John Hong
Paul Giraud
Hyeon Suk Shin
Stephen M. Morris
Jung Inn Sohn
SeungNam Cha
Jong Min Kim
Source :
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Publication Year :
2017
Publisher :
Nature Portfolio, 2017.

Abstract

Memory devices are key building blocks of image sensing circuitry. Here, the authors demonstrate a MoS2monolayer optoelectronic memory device based on charge trapping and subsequent optically-induced charge release, capable of 12-bit operation.

Subjects

Subjects :
Science

Details

Language :
English
ISSN :
20411723
Volume :
8
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
edsdoj.00167e5f1ab746d8afd521e4f4758feb
Document Type :
article
Full Text :
https://doi.org/10.1038/ncomms14734