Back to Search
Start Over
THREE-DIMENSIONAL MAGNETOMETER BASED ON HALL SENSORS INTEGRATED IN STANDARD CMOS TECHNOLOGY
- Source :
- Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7, Pp 167-171 (2019)
- Publication Year :
- 2019
- Publisher :
- Educational institution «Belarusian State University of Informatics and Radioelectronics», 2019.
-
Abstract
- The results of the device simulation of a three-dimensional magnetometer based on Hall sensors integrated in a standard CMOS technology are presented. The Hall voltage vs magnetic field, Hall voltage vs magnetic field deviation angle, and sensitivity vs temperature curves were measured. The first-principles simulation of chalcogenide spinel CuCr2Se4 used in creation of a magnetic field concentrator was performed.
Details
- Language :
- Russian
- ISSN :
- 17297648
- Issue :
- 7
- Database :
- Directory of Open Access Journals
- Journal :
- Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.00fb8d5dc564e9cb360ce3c3fd710d3
- Document Type :
- article