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Large voltage control of magnetic anisotropy in CoFeB/MgO/OX structures at room temperature
- Source :
- APL Materials, Vol 7, Iss 10, Pp 101112-101112-6 (2019)
- Publication Year :
- 2019
- Publisher :
- AIP Publishing LLC, 2019.
-
Abstract
- Voltage control of magnetic anisotropy (VCMA) provides an energy-efficient approach to manipulate spintronic devices. Currently, VCMA only shows a weak effect in magnetic tunnel junctions (MTJs) composed of CoFeB/MgO/CoFeB that are the core structure of spintronic memories and logic devices. Multiple approaches have been proposed and studied by researchers to increase the VCMA effect. Here, we demonstrate a large VCMA effect in the CoFeB/MgO/SiO2 double-oxide structure, which can be potentially modified to be compatible with the MTJ cell. The VCMA coefficient as high as 174 fJ/Vm is achieved in this structure at room temperature, with its magnitude comparable to the reported ion-driven VCMA with a high ion-conductive oxide at an elevated temperature. Theoretical analysis indicates that the large VCMA is a magnetoionic effect, which is dominated by ion migration and can be explained by a nanograin cluster model. This double-oxide structure is promising to be extended to an MTJ structure to reduce switching energy in spintronic devices.
- Subjects :
- Biotechnology
TP248.13-248.65
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 2166532X
- Volume :
- 7
- Issue :
- 10
- Database :
- Directory of Open Access Journals
- Journal :
- APL Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.01c39edf59374f1ca06e264945fd3e27
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.5101002