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Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT
- Source :
- Crystals, Vol 12, Iss 6, p 826 (2022)
- Publication Year :
- 2022
- Publisher :
- MDPI AG, 2022.
-
Abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance. Firstly, Au-contained metal stacks combined with RTA high-temperature ohmic contact schemes were presented and analyzed, including process conditions and contact formation mechanisms. Considering the issues with the Au-contained technique, the overview of a sequence of Au-free schemes is given and comprehensively discussed. In addition, in order to solve various problems caused by high-temperature conditions, novel annealing techniques including microwave annealing (MWA) and laser annealing (LA) were proposed to form Au-free low-temperature ohmic contact to AlGaN/GaN HEMT. The effects of the annealing method on surface morphology, gate leakage, dynamic on-resistance (RON), and other device characteristics are investigated and presented in this paper. By using a low-temperature annealing atmosphere or selective annealing method, gate-first Si-CMOS compatible AlGaN/GaN HEMT technology can be realized for high frequency and power application.
- Subjects :
- AlGaN/GaN
HEMT
ohmic contact
Au-free low-temperature
Crystallography
QD901-999
Subjects
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 12
- Issue :
- 6
- Database :
- Directory of Open Access Journals
- Journal :
- Crystals
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.04173fae405645d49e3b04d4015d1464
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/cryst12060826