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Ultra-broadband and polarization-insensitive terahertz metamaterial absorber based on undoped silicon
- Source :
- Results in Physics, Vol 51, Iss , Pp 106711- (2023)
- Publication Year :
- 2023
- Publisher :
- Elsevier, 2023.
-
Abstract
- Terahertz (THz) absorbers with high absorptivity across a wide frequency band have attracted considerable interest. In this paper, we present the design of an ultra-broadband THz metamaterial absorber with high absorptivity based on a single-layer square silicon array and a silicon film backed with metallic gold. It is numerically demonstrated that the absorption exceeds 90% covering the frequency range of 0.62–8.75 THz (with an effective absorption bandwidth of 8.13 THz) when the conductivity of semiconductor (undoped silicon) is 600 S/m. Diffraction and impedance-matched induce strong absorption and the corresponding broad bandwidth. The proposed ultra-broadband THz absorber is polarization-insensitive at normal incidence. It can operate over a rather wide range of incidence angle up to 60 degrees for transverse magnetic (TM) terahertz wave. This work provides a way to achieving ultra-broadband terahertz absorption, which is very useful in the development of terahertz imaging, high sensitivity sensors and detection.
- Subjects :
- Terahertz waves
Metamaterial
Ultra-broadband
Undoped silicon
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 22113797
- Volume :
- 51
- Issue :
- 106711-
- Database :
- Directory of Open Access Journals
- Journal :
- Results in Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.04f27459e704cdb911dfe23aaa91134
- Document Type :
- article
- Full Text :
- https://doi.org/10.1016/j.rinp.2023.106711