Resistive switching properties of Ce and Mn co-doped BiFeO3 thin films for nonvolatile memory application

Authors :: Zhenhua Tang
Jia Zeng
Ying Xiong
Minghua Tang
Dinglin Xu
Chuanpin Cheng
Yongguang Xiao
Yichun Zhou
Source :: AIP Advances, Vol 3, Iss 12, Pp 122117-122117-9 (2013)
Publication Year :: 2013
Publisher :: AIP Publishing LLC, 2013.
Abstract: The Ce and Mn co-doped BiFeO3 (BCFMO) thin films were synthesized on Pt/Ti/SiO2/Si substrates using a sol-gel method. The unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors were observed in the Pt/BCFMO/Pt device structure, which was attributed to the formation/rupture of metal filaments. The fabricated device exhibits a large ROFF/RON ratio (>80), long retention time (>105 s) and low programming voltages (

Full Text Access

Tools