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Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor

Authors :
Calvin Yi-Ping Chao
Thomas Meng-Hsiu Wu
Shang-Fu Yeh
Chih-Lin Lee
Honyih Tu
Joey Chiao-Yi Huang
Chin-Hao Chang
Source :
Sensors, Vol 23, Iss 18, p 7959 (2023)
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

In this work, the degradation of the random telegraph noise (RTN) and the threshold voltage (Vt) shift of an 8.3Mpixel stacked CMOS image sensor (CIS) under hot carrier injection (HCI) stress are investigated. We report for the first time the significant statistical differences between these two device aging phenomena. The Vt shift is relatively uniform among all the devices and gradually evolves over time. By contrast, the RTN degradation is evidently abrupt and random in nature and only happens to a small percentage of devices. The generation of new RTN traps by HCI during times of stress is demonstrated both statistically and on the individual device level. An improved method is developed to identify RTN devices with degenerate amplitude histograms.

Details

Language :
English
ISSN :
14248220
Volume :
23
Issue :
18
Database :
Directory of Open Access Journals
Journal :
Sensors
Publication Type :
Academic Journal
Accession number :
edsdoj.06690f3ebe8457bbca1d30d25a46465
Document Type :
article
Full Text :
https://doi.org/10.3390/s23187959