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Investigation on filter requirements and stability effects of SiC MOSFET-based high-frequency grid-connected converters
- Source :
- The Journal of Engineering (2019)
- Publication Year :
- 2019
- Publisher :
- Wiley, 2019.
-
Abstract
- The new era of power semiconductor devices is exploiting the high potential of wide bandgap device-based high-frequency power converters. The advanced capabilities of Silicon carbide (SiC) semiconductors allow the power converters to switch at higher switching frequencies with lower switching and conduction losses. Operation under higher switching frequencies can drastically reduce the output filter requirements in grid-connected converters. At higher frequencies, an L-type filter can sufficiently eliminate the switching frequency harmonics. This will reduce the size and cost of the filter, which eventually results in the optimised system cost. In this paper, the filter requirements of SiC based high-frequency converters are investigated. Usage of LCL filters to remove high-frequency harmonic will shift the resonance frequency to high-frequency region, where these harmonics can create electromagnetic compatibility issues. In industries, passive damping is utilised for mitigating these oscillations. This will result in additional losses and compromise the advantages of SiC devices. Even though active damping can be utilised to eliminate resonance oscillations, the high bandwidth processors and measurement devices may increase the cost further. Simulation study is conducted on PSCAD/MATLAB and the experimental verification using Cree SiC devices verify the filter requirements, stability issues, and possible mitigating solutions for high-frequency grid converters.
- Subjects :
- frequency convertors
silicon compounds
power semiconductor devices
switching convertors
electromagnetic compatibility
wide band gap semiconductors
power grids
power conversion harmonics
power harmonic filters
power MOSFET
carbon compounds
wide bandgap device-based high-frequency power converters
silicon carbide-based power semiconductors
output filter requirements
silicon devices
third-order LCL filter
LCL type
filter parameters
L-type filter
resonance frequency
high-frequency region
wide bandgap devices
high bandwidth processors
measurement devices
computer-based simulation study
switching frequencies
switching loss
conduction loss
silicon carbide MOSFET-based high-frequency grid-connected converters
communication signals
Cree silicon carbide devices
PSCAD
MATLAB
frequency 15.0 kHz
SiC
Engineering (General). Civil engineering (General)
TA1-2040
Subjects
Details
- Language :
- English
- ISSN :
- 20513305
- Database :
- Directory of Open Access Journals
- Journal :
- The Journal of Engineering
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.078543cfad5142889624f04b65611370
- Document Type :
- article
- Full Text :
- https://doi.org/10.1049/joe.2018.8033