Investigation of the Adaptability of Pt/HfO2/n+Si Memristors with Self‐Limiting Oxygen‐Deficient Hafnium Oxide Films under Repetitive Pulse Stimuli

Abstract In this study, the performance of memristive devices made of oxygen‐deficient HfO2 films is investigated when exposed to various electrical pulse stimulations. The devices exhibited signs of fatigue with the number increasing of a fixed frequency pulse, mirroring the synaptic adaptation to repeat stimuli. Interestingly, the synaptic behavior can be highly simulated by logic function, and the pulse frequency and magnitude play different roles in changing the synaptic curves. Only pulses with certain quantized frequencies can reshape the synaptic current response curve. In addition, a similarity is observed between the frequency stability of these devices and the biological lifespan in response to external stimuli. These observations strengthen the case for the potential of memristors in emulating cognitive functions.