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Light-triggered interfacial charge transfer and enhanced photodetection in CdSe/ZnS quantum dots/MoS2 mixed-dimensional phototransistors

Authors :
Ziwei Li
Wen Yang
Ming Huang
Xin Yang
Chenguang Zhu
Chenglin He
Lihui Li
Yajuan Wang
Yunfei Xie
Zhuoran Luo
Delang Liang
Jianhua Huang
Xiaoli Zhu
Xiujuan Zhuang
Dong Li
Anlian Pan
Source :
Opto-Electronic Advances, Vol 4, Iss 9, Pp 1-11 (2021)
Publication Year :
2021
Publisher :
Institue of Optics and Electronics, Chinese Academy of Sciences, 2021.

Abstract

Mix-dimensional van der Waals heterostructures (vdWHs) have inspired worldwide interests and efforts in the field of advanced electronics and optoelectronics. The fundamental understanding of interfacial charge transfer is of vital importance for guiding the design of functional optoelectronic applications. In this work, type-II 0D-2D CdSe/ZnS quantum dots/MoS2 vdWHs are designed to study the light-triggered interfacial charge behaviors and enhanced optoelectronic performances. From spectral measurements in both steady and transient states, the phenomena of suppressed photoluminescence (PL) emissions, shifted Raman signals and changed PL lifetimes provide strong evidences of efficient charge transfer at the 0D-2D interface. A series of spectral evolutions of heterostructures with various QDs overlapping concentrations at different laser powers are analyzed in details, which clarifies the dynamic competition between exciton and trion during an efficient doping of 3.9×1013 cm−2. The enhanced photoresponses (1.57×104 A·W–1) and detectivities (2.86×1011 Jones) in 0D/2D phototransistors further demonstrate that the light-induced charge transfer is still a feasible way to optimize the performance of optoelectronic devices. These results are expected to inspire the basic understanding of interfacial physics at 0D/2D interfaces, and shed the light on promoting the development of mixed-dimensional optoelectronic devices in the near future.

Details

Language :
English
ISSN :
20964579
Volume :
4
Issue :
9
Database :
Directory of Open Access Journals
Journal :
Opto-Electronic Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.11a602a7c6bf499c8f9785166ec8e7fc
Document Type :
article
Full Text :
https://doi.org/10.29026/oea.2021.210017