Near Infrared Lateral Photovoltaic Effect in LaTiO3 Films

We have reported on the lateral photovoltaic effect of LaTiO3 films epitaxially grown on (100) SrTiO3 substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3 film through SrTiO3 substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3 films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.