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Corrigendum: Removing the orientational degeneracy of the TS defect in 4H–SiC by electric fields and strain (2021 New J. Phys. 23 073002)

Authors :
Fabio Candolfi
Johannes A F Lehmeyer
Maximilian Rühl
Roland Nagy
Matthias Weisser
Michel Bockstedte
Michael Krieger
Heiko B Weber
Source :
New Journal of Physics, Vol 26, Iss 7, p 079501 (2024)
Publication Year :
2024
Publisher :
IOP Publishing, 2024.

Subjects

Subjects :
Science
Physics
QC1-999

Details

Language :
English
ISSN :
13672630
Volume :
26
Issue :
7
Database :
Directory of Open Access Journals
Journal :
New Journal of Physics
Publication Type :
Academic Journal
Accession number :
edsdoj.17cafa8110bb48f0baf29092cce33ea3
Document Type :
article
Full Text :
https://doi.org/10.1088/1367-2630/ad4582