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Photo-driven fin field-effect transistors
- Source :
- Opto-Electronic Science, Vol 3, Iss 5, Pp 1-9 (2024)
- Publication Year :
- 2024
- Publisher :
- Editorial Office of Opto-Electronic Journals, Institute of Optics and Electronics, CAS, China, 2024.
-
Abstract
- The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging. However, silicon, the cornerstone of modern microelectronics, can only detect light within a limited wavelength range (< 1100 nm) due to its bandgap of 1.12 eV, which restricts its utility in the infrared detection realm. Herein, a photo-driven fin field-effect transistor is presented, which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection. This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting. The lead sulfide film wraps the silicon channel to form a “three-dimensional” infrared-sensitive gate, enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance. At room temperature, this device realizes a broadband photodetection from visible (635 nm) to short-wave infrared regions (2700 nm), surpassing the working range of the regular indium gallium arsenide and germanium detectors. Furthermore, it exhibits low equivalent noise powers of 3.2×10−12 W·Hz−1/2 and 2.3×10−11 W·Hz−1/2 under 1550 nm and 2700 nm illumination, respectively. These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.
Details
- Language :
- English
- ISSN :
- 20970382
- Volume :
- 3
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- Opto-Electronic Science
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.1a79e70707724400a2052262d449c58a
- Document Type :
- article
- Full Text :
- https://doi.org/10.29026/oes.2024.230046