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Controllable potential barrier for multiple negative-differential-transconductance and its application to multi-valued logic computing

Authors :
Seunghwan Seo
Jiwan Koo
Jae-Woong Choi
Keun Heo
Maksim Andreev
Je-Jun Lee
Ju-Hee Lee
Jeong-Ick Cho
Hyeongjun Kim
Gwangwe Yoo
Dong-Ho Kang
Jaewoo Shim
Jin-Hong Park
Source :
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
Publication Year :
2021
Publisher :
Nature Portfolio, 2021.

Abstract

Abstract Various studies on multi-valued-logic (MVL) computing, which utilizes more than two logic states, have recently been resumed owing to the demand for greater power saving in the current logic technologies. In particular, unlike old-fashioned researches, extensive efforts have been focused on implementing single devices with multiple threshold voltages via a negative-differential current change phenomenon. In this work, we report a multiple negative-differential-transconductance (NDT) phenomenon, which is achieved through the control of partial gate potential and light power/wavelength in a van-der-Waals (vdW) multi-channel phototransistor. The partial gating formed a controllable potential barrier/well in the vdW channel, enabling control over the collection of carriers and eventually inducing the NDT phenomenon. Especially, the strategy shining lights with different powers/wavelengths facilitated the precise NDT control and the realization of the multiple NDT phenomenon. Finally, the usability of this multiple NDT device as a core device of MVL arithmetic circuits such as MVL inverters/NAND/NOR gates is demonstrated.

Details

Language :
English
ISSN :
23977132
Volume :
5
Issue :
1
Database :
Directory of Open Access Journals
Journal :
npj 2D Materials and Applications
Publication Type :
Academic Journal
Accession number :
edsdoj.1be82c242f4719b7edbf2f83b23b50
Document Type :
article
Full Text :
https://doi.org/10.1038/s41699-021-00213-4