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Nonlinear optical response of strain-mediated gallium arsenide microwire in the near-infrared region
- Source :
- Nanophotonics, Vol 13, Iss 13, Pp 2379-2389 (2024)
- Publication Year :
- 2024
- Publisher :
- De Gruyter, 2024.
-
Abstract
- Gallium arsenide (GaAs) semiconductor wires have emerged as potent candidates for nonlinear optical devices, necessitating bandgap engineering for an expanded operational wavelength range. We report the successful growth of strain-mediated GaAs microwires (MWs) with an average diameter of 1.1 μm. The axial tensile strain in these wires, as measured by X-ray diffraction and Raman scattering, ranges from 1.61 % to 1.95 % and from 1.44 % to 2.03 %, respectively. This strain condition significantly reduces the bandgap of GaAs MWs compared to bulk GaAs, enabling a response wavelength extension up to 1.1 μm. Open aperture Z-scan measurements reveal a nonlinear absorption coefficient of −15.9 cm/MW and a third-order magnetic susceptibility of −2.8 × 10−8 esu at 800 nm for these MWs. I-scan measurements further show that the GaAs saturable absorber has a modulation depth of 7.9 % and a nonsaturation loss of 3.3 % at 1050 nm. In laser applications, GaAs MWs have been effectively used as saturable absorbers for achieving Q-switched and dual-wavelength synchronous mode-locking operations in Yb-bulk lasers. These results not only offer new insights into the use of large diameter semiconductor wires but also expand the potential for applications requiring bandgap tuning.
Details
- Language :
- English
- ISSN :
- 21928614
- Volume :
- 13
- Issue :
- 13
- Database :
- Directory of Open Access Journals
- Journal :
- Nanophotonics
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.20b4c7c74094feaa0d800df668d16de
- Document Type :
- article
- Full Text :
- https://doi.org/10.1515/nanoph-2023-0948