Optimization design of electrode structure of GaAs photoconductive semiconductor switch

Previous studies revealed that changing the electrode structures of a gallium arsenide photoconductive semiconductor switch (GaAs PCSS) can significantly affect the local electric field and current density at the electrodes. Knowing the optimization of the electrode structures of GaAs PCSS can improve the withstand voltage performance and current carrying capability. In this work, we optimize the surface contact electrode structure of GaAs PCSS, and numerical simulations are performed to systematically study the electric field and current density distribution in the bulk of the device. The result shows that the maximum transverse current density and maximum longitudinal current density of the embedded 172° isosceles trapezoid electrode structure are smaller than other kinds of electrode structures, which is the most favorable for improving the withstand voltage and current carrying capability of GaAs PCSS.