Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall

MLA

Mei Yuan, et al. “Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall.” IEEE Journal of the Electron Devices Society, vol. 6, Jan. 2018, pp. 627–32. EBSCOhost, https://doi.org/10.1109/JEDS.2018.2833504.

APA

Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, & Hang Zhou. (2018). Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall. IEEE Journal of the Electron Devices Society, 6, 627–632. https://doi.org/10.1109/JEDS.2018.2833504

Chicago

Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, and Hang Zhou. 2018. “Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall.” IEEE Journal of the Electron Devices Society 6 (January): 627–32. doi:10.1109/JEDS.2018.2833504.