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Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications
- Source :
- Micromachines, Vol 14, Iss 8, p 1572 (2023)
- Publication Year :
- 2023
- Publisher :
- MDPI AG, 2023.
-
Abstract
- Hf0.5Zr0.5O2-based multi-level cell (MLC) ferroelectric random-access memory (FeRAM) has great potential for high-density storage applications. However, it is usually limited by the issues of a small operation margin and a large input offset. The study of circuit design and optimization for MLC FeRAM is necessary to solve these problems. In this work, we propose and simulate a configuration for a Hf0.5Zr0.5O2-based 3TnC MLC FeRAM macro circuit, which also presents a high area efficiency of 12F2 for each bit. Eight polarization states can be distinguished in a single fabricated Hf0.5Zr0.5O2-based memory device for potential MLC application, which is also simulated by a SPICE model for the subsequent circuit design. Therein, a nondestructive readout approach is adopted to expand the reading margin to 450 mV between adjacent storage levels, while a capacitorless offset-canceled sense amplifier (SA) is designed to reduce the offset voltage to 20 mV, which improves the readout reliability of multi-level states. Finally, a 4 Mb MLC FeRAM macro is simulated and verified using a GSMC 130 nm CMOS process. This study provides the foundation of circuit design for the practical fabrication of a Hf0.5Zr0.5O2-based MLC FeRAM chip in the future, which also suggests its potential for high-density storage applications.
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 14
- Issue :
- 8
- Database :
- Directory of Open Access Journals
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.2b18ca26aea5427c958c391a1000e19f
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/mi14081572