Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

MLA

Tomislav Brodar, et al. “Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation.” Crystals, vol. 10, no. 9, Sept. 2020, p. 845. EBSCOhost, https://doi.org/10.3390/cryst10090845.

APA

Tomislav Brodar, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, & Željko Pastuović. (2020). Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation. Crystals, 10(9), 845. https://doi.org/10.3390/cryst10090845

Chicago

Tomislav Brodar, Luka Bakrač, Ivana Capan, Takeshi Ohshima, Luka Snoj, Vladimir Radulović, and Željko Pastuović. 2020. “Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation.” Crystals 10 (9): 845. doi:10.3390/cryst10090845.