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Electron mobility enhancement in solution-processed low-voltage In2O3 transistors via channel interface planarization

Authors :
Alexander D. Mottram
Pichaya Pattanasattayavong
Ivan Isakov
Gwen Wyatt-Moon
Hendrik Faber
Yen-Hung Lin
Thomas D. Anthopoulos
Source :
AIP Advances, Vol 8, Iss 6, Pp 065015-065015-8 (2018)
Publication Year :
2018
Publisher :
AIP Publishing LLC, 2018.

Abstract

The quality of the gate dielectric/semiconductor interface in thin-film transistors (TFTs) is known to determine the optimum operating characteristics attainable. As a result in recent years the development of methodologies that aim to improve the channel interface quality has become a priority. Herein, we study the impact of the surface morphology of three solution-processed high-k metal oxide dielectrics, namely AlOx, HfOx, and ZrOx, on the operating characteristics of In2O3 TFTs. Six different dielectric configurations were produced via single or double-step spin-casting of the various precursor formulations. All layers exhibited high areal capacitance in the range of 200 to 575 nF/cm2, hence proving suitable, for application in low-voltage n-channel In2O3 TFTs. Study of the surface topography of the various layers indicates that double spin-cast dielectrics exhibit consistently smoother layer surfaces and yield TFTs with improved operating characteristics manifested, primarily, as an increase in the electron mobility (µ). To this end, µ is found to increase from 1 to 2 cm2/Vs for AlOx, 1.8 to 6.4 cm2/Vs for HfOx, and 2.8 to 18.7 cm2/Vs for ZrOx-based In2O3 TFTs utilizing single and double-layer dielectric, respectively. The proposed method is simple and potentially applicable to other metal oxide dielectrics and semiconductors.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
8
Issue :
6
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.2ef325fa0b6547eea2226283d504b719
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5036809