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Analyses and Experiments of Ultralow Specific On-Resistance LDMOS With Integrated Diodes
- Source :
- IEEE Journal of the Electron Devices Society, Vol 9, Pp 1161-1165 (2021)
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
-
Abstract
- An ultralow specific on-resistance ( ${R} _{\mathrm{ on,sp}}$ ) accumulation-mode LDMOS (ALDMOS) is proposed and investigated by simulations and experiments. The proposed ALDMOS features two separated integrated diodes (SID) above the N-drift surface, which forms high density electron accumulation layer in the on-state. Meanwhile, the SID not only assists depleting the N-drift to increase the N-drift doping centration ( ${N} _{\mathrm{ d}}$ ) in the off-state, but also modulates the lateral electric field to improve the breakdown voltage (BV). Thus, the proposed SID ALDMOS could achieve ultralow ${R} _{\mathrm{ on,sp}}$ and maintain high BV simultaneously. The layout and key fabrication processes of the SID ALDMOS are demonstrated. The measured results show that the SID ALDMOS realizes a BV of 483V and ${R} _{\mathrm{ on,sp}}$ of 29.3m $\boldsymbol{\Omega } $ .cm2, with a high FOM value of 7.96MW/cm2. Its ${R} _{\mathrm{ on,sp}}$ is decreased by 33.7% compared with triple RESURF LDMOS at the same BV.
Details
- Language :
- English
- ISSN :
- 21686734
- Volume :
- 9
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Journal of the Electron Devices Society
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.333d658ee3034f7a8d982b7d89e29915
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JEDS.2021.3114738