Efficient full spin–orbit torque switching in a single layer of a perpendicularly magnetized single-crystalline ferromagnet

Spin orbit torque enables an innovative method of manipulating the magnetization of ferromagnets by current injection. Here, Jiang et al. demonstrate efficient full spin–orbit torque switching with an activation current density of ∼3.4 × 105 A cm−2 in a single layer ferromagnetic semiconductor GaMnAs.