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AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
- Source :
- AIP Advances, Vol 7, Iss 9, Pp 095305-095305-7 (2017)
- Publication Year :
- 2017
- Publisher :
- AIP Publishing LLC, 2017.
-
Abstract
- This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 7
- Issue :
- 9
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.3b80a0ebc2a24a97b8aee282465b6ff2
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4999810