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Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor
- Source :
- IEEE Journal of the Electron Devices Society, Vol 8, Pp 1043-1049 (2020)
- Publication Year :
- 2020
- Publisher :
- IEEE, 2020.
-
Abstract
- The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normally-off characteristic. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to displacement damage induced by energetic radiation. The anode trigger current which denotes the latch-up of internal thyristor structure is a key parameter for AS-MCTs. From the aspects of devices physics, we propose a model to describe the displacement damage on trigger current. Our model provides an excellent fit to the experimental data of the AS-MCT samples subjected to fission neutrons with flux in the range of $3.1\times 10^{9}-5.5\times 10^{13}\,\,\mathrm {cm}^{-2}$ . Moreover, this work shows that the high injection effect can alleviate the displacement damage of trigger current following high flux exposures.
Details
- Language :
- English
- ISSN :
- 21686734
- Volume :
- 8
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Journal of the Electron Devices Society
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.3c6b46a674e646299f678e151fea3889
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JEDS.2020.3025511