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A generic method to control hysteresis and memory effect in Van der Waals hybrids
- Source :
- Materials Research Express, Vol 7, Iss 1, p 014004 (2020)
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- The diverse properties of two-dimensional materials have been utilized in a variety of architecture to fabricate high quality electronic circuit elements. Here we demonstrate a generic method to control hysteresis and stable memory effect in Van der Waals hybrids with a floating gate as the base layer. The floating gate can be charged with a global back gate-voltage, which it can retain in a stable manner. Such devices can provide a very high, leakage-free effective gate-voltage on the field-effect transistors due to effective capacitance amplification, which also leads to reduced input power requirements on electronic devices. The capacitance amplification factor of ∼10 can be further enhanced by increasing the area of the floating gate. We have exploited this method to achieve highly durable memory action multiple genre of ultra-thin 2D channels, including graphene, MoS _2 , and topological insulators at room temperature.
Details
- Language :
- English
- ISSN :
- 20531591
- Volume :
- 7
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Materials Research Express
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.3d2a4242af934018b8bab19efbec43d9
- Document Type :
- article
- Full Text :
- https://doi.org/10.1088/2053-1591/ab6923