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High-efficiency SOI-based metalenses at telecommunication wavelengths
- Source :
- Nanophotonics, Vol 11, Iss 21, Pp 4697-4704 (2022)
- Publication Year :
- 2022
- Publisher :
- De Gruyter, 2022.
-
Abstract
- We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.
- Subjects :
- metalens
metasurface
silicon photonics
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 21928614 and 20220480
- Volume :
- 11
- Issue :
- 21
- Database :
- Directory of Open Access Journals
- Journal :
- Nanophotonics
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.3e6ae01b20524d5cb7f09b0f73edc1ef
- Document Type :
- article
- Full Text :
- https://doi.org/10.1515/nanoph-2022-0480