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High-efficiency SOI-based metalenses at telecommunication wavelengths

Authors :
Ryu Taesu
Kim Moohyuk
Hwang Yongsop
Kim Myung-Ki
Yang Jin-Kyu
Source :
Nanophotonics, Vol 11, Iss 21, Pp 4697-4704 (2022)
Publication Year :
2022
Publisher :
De Gruyter, 2022.

Abstract

We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.

Details

Language :
English
ISSN :
21928614 and 20220480
Volume :
11
Issue :
21
Database :
Directory of Open Access Journals
Journal :
Nanophotonics
Publication Type :
Academic Journal
Accession number :
edsdoj.3e6ae01b20524d5cb7f09b0f73edc1ef
Document Type :
article
Full Text :
https://doi.org/10.1515/nanoph-2022-0480