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Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs
- Source :
- IEEE Journal of the Electron Devices Society, Vol 11, Pp 354-358 (2023)
- Publication Year :
- 2023
- Publisher :
- IEEE, 2023.
-
Abstract
- The origin of a greater decrease in kink drain voltage $V_{kink}$ in floating body PD-SOI MOSFETs with gate lengths shorter than $0.35 ~\mu m$ is newly revealed. The $V_{kink}$ formula as a function of the internal body voltage and $I_{DS}$ is derived by combining the modified impact ionization multiplication factor with the body-source junction I-V equation. The parameters in this formula are extracted from the measured data of $I_{B}$ vs. $V_{BS}$ and ${- I}_{B}/I_{DS}$ vs. $V_{DS}$ in the body contacted devices. By calculating the formula using the extracted parameters, it is newly found that a decrease of the drain-source saturation voltage at a shorter channel is a primary cause for the short-channel effect on $V_{kink}$ reduction.
Details
- Language :
- English
- ISSN :
- 21686734
- Volume :
- 11
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Journal of the Electron Devices Society
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.40d021386a224f9796e37a026a18f419
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JEDS.2023.3285240