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Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions

Authors :
Zhiwei Liu
Puyang Cai
Songhai Yu
Linxin Han
Runsheng Wang
Yanqing Wu
Pengpeng Ren
Zhigang Ji
Ru Huang
Source :
IEEE Journal of the Electron Devices Society, Vol 9, Pp 735-740 (2021)
Publication Year :
2021
Publisher :
IEEE, 2021.

Abstract

Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf0.5Zr0.5O2-based (HZO) memory has attracted growing attention due to its excellent CMOS compatibility. This letter investigated the time dependent dielectric breakdown (TDDB) of HZO ferroelectric under both forward and reverse stress conditions, which is relevant to the memory’s practical operation. The key similarities and the differences for both breakdown conditions have been identified and the underlying mechanism is explored. It is found that the pre-existing oxygen vacancies near the bottom electrode play the key role and all the observed phenomenon can be explained. Therefore, the precise control of these pre-existing oxygen vacancies can be critical for future TDDB improvement.

Details

Language :
English
ISSN :
21686734
Volume :
9
Database :
Directory of Open Access Journals
Journal :
IEEE Journal of the Electron Devices Society
Publication Type :
Academic Journal
Accession number :
edsdoj.430902d35c67471d9662a8b843c43c74
Document Type :
article
Full Text :
https://doi.org/10.1109/JEDS.2021.3103182