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Preparation and Properties of Low-Dielectric Polyimide Films Containing Tert-Butyl

Authors :
Xin Li
Rongrong Zheng
Cheng Wang
Haiyang Chang
Shuwu Chen
Liyan Wang
Xue Cui
Yutao Liu
Junhao Li
Guangning Yu
Ji Shi
Source :
Polymers, Vol 16, Iss 7, p 984 (2024)
Publication Year :
2024
Publisher :
MDPI AG, 2024.

Abstract

The design of high-performance polyimide (PI) films and understanding the relationship of the structure–dielectric property are of great significance in the field of the microelectronics industry, but are challenging. Herein, we describe the first work to construct a series of novel tert-butyl PI films (denoted as PI-1, PI-2, PI-3, and PI-4) based on a low-temperature polymerization strategy, which employed tetracarboxylic dianhydride (pyromellitic anhydride, 3,3′,4,4′-biphenyl tetracarboxylic anhydride, 4,4′-diphenyl ether dianhydride, and 3,3′,4,4′-benzophenone tetracarboxylic anhydride) and 4,4′-diamino-3,5-ditert butyl biphenyl ether as monomers. The results indicate that introducing tert-butyl branches in the main chain of PIs can enhance the free volume of the molecular chain and reduce the interaction between molecular chains of PI, resulting in a low dielectric constant. Particularly, the optimized PI-4 exhibits an excellent comprehensive performance with a high (5) wt% loss temperature (454 °C), tensile strength (117.40 MPa), and maximum hydrophobic angle (80.16°), and a low dielectric constant (2.90), which outperforms most of the results reported to date.

Details

Language :
English
ISSN :
16070984 and 20734360
Volume :
16
Issue :
7
Database :
Directory of Open Access Journals
Journal :
Polymers
Publication Type :
Academic Journal
Accession number :
edsdoj.451d2779ad6246daa3ccb31e6011c43b
Document Type :
article
Full Text :
https://doi.org/10.3390/polym16070984