Fabrication of Modified Random Phase Masks with Phase Modulation Elements Exhibiting Gaussian Profiles Using Molecular Migration under Photopolymerization

Random phase masks are important technical elements for realizing holographic memory systems that enable high density recording. However, the broadly distributed Fourier spectrum often presents a problem because wide recording spots result in reduced total storage capacity for a recording medium. In the present study, we propose modified random phase masks with phase modulation elements exhibiting Gaussian profiles to suppress the spread of the recording spot and keep it in a narrow area, based on the reduction of the high-frequency components in a random phase pattern. We confirm the effectiveness of the proposed random phase mask using simulations of a computer-generated binary hologram. However, issues still remain in terms of the fabrication of random phase masks with Gaussian profiles. Therefore, we evaluate the feasibility of fabricating the proposed random phase mask using molecular diffusion under photopolymerization. The results confirm the feasibility of this approach over a relatively wide area for actual fabrication.