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Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

Authors :
Jun-Hong Weng
Ming-Cheng Kao
Kai-Huang Chen
Men-Zhe Li
Source :
Nanomaterials, Vol 13, Iss 19, p 2685 (2023)
Publication Year :
2023
Publisher :
MDPI AG, 2023.

Abstract

Copper-doped zinc oxide films (Zn1−xCuxO) (x = 0, 2%, 4%, 6%) were fabricated on conductive substrates using the sol-gel process. The crystal structure, optical and resistive switching properties of Zn1−xCuxO films are studied and discussed. RRAM is made using Zn1−xCuxO as the resistive layer. The results show that the (002) peak intensity and grain size of Zn1−xCuxOfilms increase from 0 to 6%. In addition, PL spectroscopy shows that the oxygen vacancy defect density of Zn1−xCuxO films also increases with the increase in Cu. The improved resistive switching performance of the RRAM device can be attributed to the formation of conductive filaments and the destruction of more oxygen vacancies in the Zn1−xCuxO film. Consequently, the RRAM device exhibits a higher low resistance state to high resistance state ratio and an HRS state of higher resistance value.

Details

Language :
English
ISSN :
20794991
Volume :
13
Issue :
19
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.493bf039fde4e609cbb545d77577285
Document Type :
article
Full Text :
https://doi.org/10.3390/nano13192685