The Advantages of AlGaN-Based UV-LEDs Inserted With a p-AlGaN Layer Between the EBL and Active Region

The advantages of ultraviolet light-emitting diodes (LEDs) inserted with a p-AlGaN layer, whose Al mole composition is less than that of the last barrier, between the last barrier and the electron blocking layer have been investigated by using the Crosslight APSYS programs. The results show that the output power and the internal quantum efficiency of the proposed LEDs are improved. Furthermore, the efficiency droop is also mitigated effectively. Based on the analysis of electrical and optical characteristics, these improvements are mainly attributed to the relatively higher effective barrier height against the escape of electrons and an increased hole concentration in the quantum wells by inserting a hole reservoir near the active region. In addition, the optimized Al mole composition of this inserted layer has been also studied in detail, and the optimized Al mole composition has been achieved.