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Temperature-dependent growth of topological insulator Bi2Se3 for nanoscale fabrication
- Source :
- AIP Advances, Vol 10, Iss 11, Pp 115202-115202-7 (2020)
- Publication Year :
- 2020
- Publisher :
- AIP Publishing LLC, 2020.
-
Abstract
- Topological insulators and their characteristics are among the most highly studied areas in condensed matter physics. Bi2Se3 nanocrystals were synthesized via chemical vapor deposition at different temperatures on a silicon substrate with a gold catalyst. The effects of temperature on the obtained Bi2Se3 nanocrystals were systematically investigated. The size and length of Bi2Se3 nanocrystals change when the temperature increases from 500 °C to 600 °C. We found that the crystallization quality of the Bi2Se3 nanocrystals synthesized at 560 °C is optimal. At this temperature, we can get the desired thickness and length of the nanocrystals, which is quite suitable for nanoscale fabrication.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 10
- Issue :
- 11
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.5162c2f84eb54f4db8f0635b2e0cc42c
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/5.0021125