Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

Abstract This investigation delves into the complex interaction at metal-semiconductor interfaces, highlighting the magnetic proximity effect in Ni/Si interfaces through systematic X-ray magnetic circular dichroism (XMCD) studies at Ni and Si edges. We analyzed two Ni/Si heterostructures with differing semiconductor doping, uncovering a magnetic proximity effect manifesting as equilibrium magnetization in the semiconductor substrate induced by the adjacent Ni layer. Our results display distinct magnetization signs corresponding to the doping levels: low-doped samples show parallel alignment to the Ni layer, while high-doped samples align antiparallel, indicating a nuanced interplay of underlying magnetization mechanisms. These findings pinpoint the roles of electron tunneling and exchange splitting modification in the magnetization behavior. The study enriches the understanding of ferromagnetic-semiconductor interface behavior, setting a precedent for the design of advanced spintronic devices that leverage the nuanced magnetic properties of these hybrid systems.