Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region

MLA

Tien-Yu Lan, et al. “Research on ESD Protection of Ultra-High Voltage NLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region.” IEEE Journal of the Electron Devices Society, vol. 9, Jan. 2021, pp. 763–73. EBSCOhost, https://doi.org/10.1109/JEDS.2021.3102278.

APA

Tien-Yu Lan, Shen-Li Chen, Hung-Wei Chen, & Yi-Mu Lee. (2021). Research on ESD Protection of Ultra-High Voltage nLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region. IEEE Journal of the Electron Devices Society, 9, 763–773. https://doi.org/10.1109/JEDS.2021.3102278

Chicago

Tien-Yu Lan, Shen-Li Chen, Hung-Wei Chen, and Yi-Mu Lee. 2021. “Research on ESD Protection of Ultra-High Voltage NLDMOS Devices by Super-Junction Engineering in the Drain-Side Drift Region.” IEEE Journal of the Electron Devices Society 9 (January): 763–73. doi:10.1109/JEDS.2021.3102278.