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An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs
- Source :
- Journal of Telecommunications and Information Technology, Iss 1 (2001)
- Publication Year :
- 2001
- Publisher :
- National Institute of Telecommunications, 2001.
-
Abstract
- An in uence of the selected physical phenom- ena: impact ionization in silicon and time variation of inter- nal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so- called
Details
- Language :
- English
- ISSN :
- 15094553 and 18998852
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Journal of Telecommunications and Information Technology
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.558487f209724e7cb303989c294a8261
- Document Type :
- article
- Full Text :
- https://doi.org/10.26636/jtit.2001.1.40