An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs

Authors :: Jan Gibki
Source :: Journal of Telecommunications and Information Technology, Iss 1 (2001)
Publication Year :: 2001
Publisher :: National Institute of Telecommunications, 2001.
Abstract: An in uence of the selected physical phenom- ena: impact ionization in silicon and time variation of inter- nal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the so- called

Subjects :: SOI MOSFET
floating body
avalanche ionization
recombination
displacement current
admittance
Telecommunication
TK5101-6720
Information technology
T58.5-58.64

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