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Effect of barrier thickness on photoelectric properties of InGaN/GaN asymmetric multiple-quantum-well structure light-emitting diode

Authors :
Li-E. Cai
Bao-Ping Zhang
Hao-Xiang Lin
Zai-Jun Cheng
Peng-Peng Ren
Zhi-Chao Chen
Jin-Man Huang
Lin-Lin Cai
Source :
AIP Advances, Vol 12, Iss 6, Pp 065007-065007-5 (2022)
Publication Year :
2022
Publisher :
AIP Publishing LLC, 2022.

Abstract

GaN/GaInN asymmetric multiple quantum well light-emitting diodes with varying potential barrier thicknesses (5 and 15 nm) are grown by using metal organic chemical vapor deposition. The narrow barrier structure improves the performance of the device, including the super-linear increase of electroluminescence integral intensity, the mitigation of efficiency droop at high current density, the reduction of wavelength drift, the reduction of forward voltage, and the improvement of wall-plug efficiency. This is due to the narrowing of the thickness of the quantum barrier, which results in the smaller electric field among the quantum well, the weakening of the quantum confinement Stark effect, the more uniform distribution of carriers across the active region of the device, and the suppression of electron leakage.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
12
Issue :
6
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.5931344a18664a49aa05218a53456d23
Document Type :
article
Full Text :
https://doi.org/10.1063/5.0087666