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Epitaxial CdSe/PbSe Heterojunction Growth and MWIR Photovoltaic Detector
- Source :
- Materials, Vol 16, Iss 5, p 1866 (2023)
- Publication Year :
- 2023
- Publisher :
- MDPI AG, 2023.
-
Abstract
- A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection High-Energy Electron Diffraction (RHEED) during the nucleation and growth of CdSe indicates high-quality single-phase cubic CdSe. This is a first-time demonstration of single crystalline and single phase CdSe growth on single crystalline PbSe, to the best of our knowledge. The current–voltage characteristic indicates a p–n junction diode with a rectifying factor over 50 at room temperature. The detector structure is characterized by radiometric measurement. A 30 μm × 30 μm pixel achieved a peak responsivity of 0.06 A/W and a specific detectivity (D*) of 6.5 × 108 Jones under a zero bias photovoltaic operation. With decreasing temperature, the optical signal increased by almost an order of magnitude as it approached 230 K (with thermoelectric cooling) while maintaining a similar level of noise, achieving a responsivity of 0.441 A/W and a D* of 4.4 × 109 Jones at 230 K.
- Subjects :
- mid-infrared detector
MBE
heterostructure
lead-chalcogenides
photovoltaic detector
epitaxial growth
Technology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Subjects
Details
- Language :
- English
- ISSN :
- 16051866 and 19961944
- Volume :
- 16
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.5b58787ee472404abc7c29eda67ba566
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/ma16051866