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DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

Authors :
Haoliang Huang
Zhenlin Luo
Yuanjun Yang
Yu Yun
Mengmeng Yang
Dechao Meng
Haibo Wang
Sixia Hu
Jun Bao
Yalin Lu
Chen Gao
Source :
AIP Advances, Vol 4, Iss 5, Pp 057102-057102-6 (2014)
Publication Year :
2014
Publisher :
AIP Publishing LLC, 2014.

Abstract

The metal-insulator transition (MIT) in strong correlated electron materials can be induced by external perturbation in forms of thermal, electrical, optical, or magnetic fields. We report on the DC current induced MIT in epitaxial Sm0.6Nd0.4NiO3 (SNNO) thin film deposited by pulsed laser deposition on (001)-LaAlO3 substrate. It was found that the MIT in SNNO film not only can be triggered by thermal, but also can be induced by DC current. The TMI of SNNO film decreases from 282 K to 200 K with the DC current density increasing from 0.003 × 109 A•m−2 to 4.9 × 109 A•m−2. Based on the resistivity curves measured at different temperatures, the MIT phase diagram has been successfully constructed.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
4
Issue :
5
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.5dba2fc085947b3b18569c1bee39da1
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4874642