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Development of High-purity Metal Sputtering Targets for Integrated Circuits

Authors :
He Jinjiang
Lyu Baoguo
Jia Qian
Ding Zhaochong
Liu Shuqin
Luo Junfeng
Wang Xingquan
Source :
中国工程科学, Vol 25, Iss 1, Pp 79-87 (2023)
Publication Year :
2023
Publisher :
《中国工程科学》杂志社, 2023.

Abstract

High-purity metal sputtering target is one of the key basic materials for integrated circuits. Self-dependence of the sputtering targets is vital for the high-quality development of the integrated circuit industry in China. This study analyzes the application demand for and development status of high-purity metal sputtering targets for integrated circuits, involving high-purity aluminum and aluminum alloys, high-purity copper and copper alloys, high-purity titanium, high-purity tantalum, high-purity cobalt, high-purity nickel platinum, and high-purity tungsten and tungsten alloys. Moreover, it summarizes the challenges regarding the key manufacturing technologies and engineering application of high-performance sputtering targets in China and proposes several major development directions based on the development goals of the field by 2030. Specifically, China needs to improve its material processing technologies, focus on the key technologies for high-performance target processing, develop high-end new materials according to frontier demands, and improve the capabilities of material analysis, testing, and application evaluation. Furthermore, the following suggestions are proposed: establishing an industry-education-research-application system, realizing the domestic manufacturing of key equipment, strengthening talent team construction, establishing an independent intellectual property system, and expanding international exchange and cooperation,thereby promoting the development quality and level of high-purity metal sputtering targets.

Details

Language :
Chinese
ISSN :
20960034
Volume :
25
Issue :
1
Database :
Directory of Open Access Journals
Journal :
中国工程科学
Publication Type :
Academic Journal
Accession number :
edsdoj.5ef7a222dfc94aacbb75db08e0f4ce69
Document Type :
article
Full Text :
https://doi.org/10.15302/J-SSCAE-2023.01.003