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GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

Authors :
Quang Chieu Bui
Ludovic Largeau
Martina Morassi
Nikoletta Jegenyes
Olivia Mauguin
Laurent Travers
Xavier Lafosse
Christophe Dupuis
Jean-Christophe Harmand
Maria Tchernycheva
Noelle Gogneau
Source :
Applied Sciences, Vol 9, Iss 17, p 3528 (2019)
Publication Year :
2019
Publisher :
MDPI AG, 2019.

Abstract

The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

Details

Language :
English
ISSN :
20763417
Volume :
9
Issue :
17
Database :
Directory of Open Access Journals
Journal :
Applied Sciences
Publication Type :
Academic Journal
Accession number :
edsdoj.6189eaac1f204665bf0d7f6342e3937a
Document Type :
article
Full Text :
https://doi.org/10.3390/app9173528