The role of TCNQ for surface and interface passivation in inverted perovskite solar cells

Abstract The noticeable growth in the power conversion efficiency of solution-processed organo-inorganic halide perovskite solar cells (OIHPSCs) incited the photovoltaic community to look for limitations that hurdle the commercialization process. The surface and interface defects between the perovskite and electron transport layers are among the main challenges that cause significant non-radiative recombination losses, thereby they result in poor performance and stability. In this work, tetracyanoquinodimethane (TCNQ), a strong electron acceptor molecule, is applied at the interface between the photoactive perovskite and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) layers to modify the interface, and enhance device performance and stability. Steady-state and time-resolved photoluminescence measurements were used to characterize the role of the TCNQ passivation in reducing non-radiative recombination of charge carriers. Current density versus voltage (J-V) measurements show improvement in devices open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) for devices with TCNQ interface passivation, which is attributed to suppressed non-radiative recombination. In addition, a noticeable improvement in the device’s stability was observed. This study reveals the dual role of TCNQ passivation in improving the photoelectric properties and stability of ambient air processed perovskite devices with the pin architecture.